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SUD50N06-07L
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
60
1
3
± 100
V
nA
V DS = 60 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 60 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 60 V, V GS = 0 V, T J = 175 °C
150
On-State Drain Current a
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
50
0.0061
0.0074
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 10 V, I D = 20 A, T J = 125 °C
V GS = 10 V, I D = 20 A, T J = 175 °C
V GS = 4.5 V, I D = 20 A
0.0071
0.0122
0.0148
0.0088
Ω
Forward Transconductance
a
g fs
V DS = 15 V, I D = 15 A
20
80
S
Dynamic b
Input Capacitance
C iss
5800
Gate-Source Charge
Gate-Drain Charge
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge c
c
c
Gate Resistance
C oss
C rss
Q g
Q gs
Q gd
R g
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 30 V, V GS = 10 V, I D = 50 A
450
300
96
19
20
1.5
144
pF
nC
Ω
Turn-On Delay Time
c
t d(on)
15
25
Rise Time
c
Turn-Off Delay Time
c
t r
t d(off)
V DD = 30 V, R L = 0.6 Ω
I D ? 50 A, V GEN = 10 V, R g = 2.5 Ω
13
62
20
95
ns
Fall Time c
t f
14
25
Source-Drain Diode Ratings and Characteristics (T C = 25
°C) b
Continuous Current
Pulsed Current
I S
I SM
50
100
A
Forward Voltage a
Reverse Recovery Time
V SD
t rr
I F = 30 A, V GS = 0 V
I F = 30 A, di/dt = 100 A/μs
0.90
37
1.50
55
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72953
S-71661-Rev. B, 06-Aug-07
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